LSF872C1S infrared emitting diode 2.electrical & optical characteristics (ta=25 ??) symbol min typ max unit po 14.0 17.0 20.0 mw vf 1.55 2.0 v ir 10 ?a ?p 870 nm ?? 45 nm ?? 25 deg. junction capacitance cj 1mhz ,v=0v 50 pf p/t -0.3 %/ ?? v/t -2.1 mv/ ?? ?@ anode ?a cathode features high-output power compact high reliability applications optical switches optical sensors 1. absolute maximum ratings (ta=25 ??) symbol unit if ma ifp a vr v pd mw topr ?? tstg ?? tj ?? tls ?? *2:time 5 sec max,position:up to 3mm from the body peak wavelength spectral line half width half intensity beam angle temp. coefficient of po temp. coefficient of vf i t e m power output forward voltage reverse current if=10ma if=10ma if=50ma if=50ma if=50ma conditions if=50ma if=50ma vr=5v i t e m forward current (dc) forward current (pulse)*1 reverse voltage power dissipation operating temp. storage temp. junction temp. 5 100 -20 to 85 -30 to 100 ratings dimensions (unit:mm) 60 0.5 100 260 lead soldering temp.*2 *1:tw=10us,t=10ms thermal derating curve 0 20 40 60 80 100 120 -300 306090 ambient temperature(??) forward current(ma) forward i-v characteristics 0 20 40 60 80 100 120 0123 forward voltage(v) forward current(ma) power output vs temperature if=10ma 0 20 40 60 80 100 120 140 -30 0 30 60 90 ambient temperature(??) relative power output(%) spectral output 0 20 40 60 80 100 120 770 870 970 wavelength(nm) relative power output(%) radiation pattern 0 20 40 60 80 100 120 -90 -60 -30 0 30 60 90 beam angle(deg.) relative power output(%) relative power vs forward current 0 50 100 150 200 250 0 25 50 75 100 125 forward current(ma) relative power output(%) forward voltage vs temperature if=10ma 1 1.1 1.2 1.3 1.4 1.5 1.6 -30 0 30 60 90 ambient temperature(??) forward voltage(v) optrans 2006/5/24 to purchase this part contact marktech optoelectronics at 800.984.5337 optoelectronics www.marktechopto.com marktech
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